Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN Barrier metal is required for preventing the migration of metal ion and O2 into dielectric regions during metallization, so it is called diffusion barrier materials. It is increasingly important to semiconductor device scaling because metallization metals such as Al and Cu easily react with dielectric materials, and it causes semiconductor device to lose reliability. PRODUCT 4MS Tetramethylsilane 자세히보기 Ru(EtCp)2 Bis(ethylcyclopentadienyl)Ruthenium 자세히보기 Ru-4 Ru(η6-p-Cymene)(η4-1,3-cyclohexadiene) 자세히보기 TBTDETa (t-butylimido)tris(diethylamido)Tantalum 자세히보기 TBTEMTa (t-butylimido)tris(ethylmethylamido)Tantalum 자세히보기 TDMAT Tetrakis(dimethylamido)titanium(IV) 자세히보기 TiCl4 Titanium tetrachloride 자세히보기 4MS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetramethylsilane Chemical formula C4H12Si formula weight (g/mol) 88.22 Boiling point (℃) 26~28 Vapor pressure (℃/torr) - Phase Colorless Liquid Water reactivity Stable 닫기 Ru(EtCp)2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(ethylcyclopentadienyl)Ruthenium Chemical formula C14H18Ru formula weight (g/mol) 287.37 Boiling point (℃) 267 Vapor pressure (℃/torr) 90 / 0.34 Phase Yellow liquid Water reactivity React slowly 닫기 Ru-4 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Ru(η6-p-Cymene)(η4-1,3-cyclohexadiene) Chemical formula C16H22Ru formula weight (g/mol) 315.23 Boiling point (℃) 290 Vapor pressure (℃/torr) 134 / 1.0 Phase Yellow liquid Water reactivity React slowly 닫기 TBTDETa Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. (t-butylimido)tris(diethylamido)Tantalum Chemical formula C16H39N4Ta formula weight (g/mol) 468.46 Boiling point (℃) 95 / 0.5 Vapor pressure (℃/torr) 120 / 1.0 Phase Pale yellow liquid Water reactivity React Violently 닫기 TBTEMTa Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. (t-butylimido)tris(ethylmethylamido)Tantalum Chemical formula C13H33N4Ta formula weight (g/mol) 426.38 Boiling point (℃) 88 / 0.1 Vapor pressure (℃/torr) 95 / 1.8 Phase Pale yellow liquid Water reactivity React Violently 닫기 TDMAT Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetrakis(dimethylamido)titanium(IV) Chemical formula C8H24N4Ti formula weight (g/mol) 224.18 Boiling point (℃) 225 Vapor pressure (℃/torr) 25 / 0.1 Phase Pale yellow liquid Water reactivity React Violently 닫기 TiCl4 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Titanium tetrachloride Chemical formula TiCl4 formula weight (g/mol) 189.69 Boiling point (℃) 136.4 Vapor pressure (℃/torr) 20 / 9.75 Phase Colorless liquid Water reactivity React Violently 닫기
