Products

GST Material

Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN

PRAM(Phase-change RAM) is a kind of non-volatile random-access memory, it is one of promising memory device having high scalability, high read and write speed, and low power consumption. For those performances, phase-change materials such as GST(Ge2Sb2Te5) is required.

PRODUCT

BDMEDAGe

Bis(dimethylethylenediamine)Germanium

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DIPTe

Di(IsoPropyl) Telluride

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DTBUTe

Di(tert-butyl) Telluride

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TDMAGe

Tetrakis(dimethylamido)Germanium

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TDMASb

Tetrakis(dimethylamido)Antimony

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TEMAGe

Tetrakis(ethylmethylamido)Germanium

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