Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN Decreasing feature size in semiconductor device causes problems of RC delay and Cross talk, it makes Total Signal Delay Time. Thus, it is very important to decrease RC delay for high density and high speed performance of device. Low-k material is strongly required for inter-layer dielectric. PRODUCT DMDMOS Dimethyldimethoxysilane 자세히보기 OMCTS Octamethylcyclosiloxane 자세히보기 TMCTS 1,3,5,7-Tetramethylcyclosiloxane 자세히보기 DMDMOS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Dimethyldimethoxysilane Chemical formula C4H12O2Si formula weight (g/mol) 120.23 Boiling point (℃) 81.4 Vapor pressure (℃/torr) - Phase Colorless Liquid Water reactivity Slowly decompose 닫기 OMCTS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Octamethylcyclosiloxane Chemical formula C8H24O4Si4 formula weight (g/mol) 296.62 Boiling point (℃) 175 Vapor pressure (℃/torr) 21.7 / 1 Phase Colorless Liquid Water reactivity Slowly decompose 닫기 TMCTS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. 1,3,5,7-Tetramethylcyclosiloxane Chemical formula C4H16Si4O4 formula weight (g/mol) 240.51 Boiling point (℃) 135 Vapor pressure (℃/torr) 20 / 7 Phase Colorless Liquid Water reactivity Slowly decompose 닫기
