Barrier Metal DPT Material Electrode Material Etch Hard Mask film GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN Etch Hard Mask Film용 재료는 소자의 미세화에 따라 미세패턴 구현을 위해 도입된 Hard Mask용 ACL(Amorphous Carbon Layer : 비정질 탄소박막) Precursors입니다. 디엔에프의 ACL Precursors인 1-Hexene과 Propylene은 탄소 함유량이 높아 Etch Resistance가 우수하기 때문에 미세패턴 구현이 용이합니다. PRODUCT 1-Hexene 1-Hexene 자세히보기 4MS Tetramethylsilane 자세히보기 Propylene Propylene 자세히보기 1-Hexene Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. 1-Hexene Chemical formula C6H12 formula weight (g/mol) 84.16 Boiling point (℃) 60~66 Vapor pressure (℃/torr) 21 / 155 Phase Colorless Liquid Water reactivity Stable 닫기 4MS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetramethylsilane Chemical formula C4H12Si formula weight (g/mol) 88.22 Boiling point (℃) 26~28 Vapor pressure (℃/torr) - Phase Colorless Liquid Water reactivity Stable 닫기 Propylene Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Propylene Chemical formula C3H6 formula weight (g/mol) 42.08 Boiling point (℃) -47 Vapor pressure (℃/torr) 37 / 15.4 Phase Colorless Gas Water reactivity Stable 닫기
