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PRAM GST

PRAM은 Flash Memory와 같은 비휘발성 저장 능력을 가짐과 동시에, DRAM과 같이 고집적성을 띠므로 고속 동작이 가능하며, 낮은 소비전력을 구현하는 차세대 Memory Device입니다. GST Precursors는 이러한 PRAM에 쓰이는 기억 소자 물질의 Ge2Sb2Te5라는 상 변화 물질의 재료가 됩니다.

PRAM용 GST

Product Structure Property MSDS
TDMAGe Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H24N4Ge
: 248.73g/mol
: 203℃
: 14℃
: 50℃/3torr
: Liquid (Colorless)
: React Violently
TEMAGe Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C12H32N4Ge
: 305.05g/mol
: 260℃
: 60℃/0.52torr
: Liquid (Colorless)
: React Violently
TDMASb Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H18N3Sb
: 253.81g/mol
: 32-34℃/0.45torr
: 40℃/4.9torr
: Liquid (Colorless)
: React Violently
DIPTe Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H14Te
: 213.77g/mol
: 49℃/14torr
: -55℃
: 20℃/2.57torr
: Liquid (Orange)
: React slowly
DTBUTe Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H18Te
: 241.83g/mol
: 50℃/1torr
: N/A
: 40℃/1.3torr
: Liquid (Pale yellow)
: React slowly
SS2 Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H18Si2Se
: 225.34g/mol
: 31℃/2torr
: -7℃
: N/A
: Liquid (Yellow)
: React Violently
BDMEDAGe Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H20N4Ge
: 244.88g/mol
: 214℃ : 32℃/0.5torr
: Colorless Liquid
: Slowly react