Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN We are supplying products that can be the optimal solution for semiconductor process miniaturization. We develop and supply core materials for semiconductor devices such as Barrier Metal, Electrode Material, Gap Fill Material, High-k, Low-k, Metallization Metal, Etch Hard Mask Film, DPT Material, and PRAM GST material used in the wafer patterning process. Application by product - DRAM