Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN Due to delay of EUV(Extreme Ultraviolet) Lithography development and commercialization, chipmakers had to choose DPT(Double Patterning Technology) process for wafer patterning below 30nm. DPT process requires etch resistible layer materials such as DIPAS which is deposited on top of a processed resist material to form sidewall spacers. PRODUCT DIPAS Diisopropylaminosilane 자세히보기 E2S2 Bis(Diethylamino)silane 자세히보기 DIPAS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Diisopropylaminosilane Chemical formula C6H17NSi formula weight (g/mol) 131.30 Boiling point (℃) 115 Vapor pressure (℃/torr) 55 / 106 Phase Colorless liquid Water reactivity Violently react 닫기 E2S2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(Diethylamino)silane Chemical formula C8H22N2Si formula weight (g/mol) 174.40 Boiling point (℃) 188 Vapor pressure (℃/torr) 25 / 0.795 Phase Colorless liquid Water reactivity Violently react 닫기
