Electrode Material

DRAM cell capacitor requires electrode materials having low electrical resistivity as well as good etching property. Ru and Nb have been being studied as bottom electrode while TiN has been used.

PRODUCT

Ru(EtCp)2

Bis(ethylcyclopentadienyl)Ruthenium

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Ru-4

Ru(η6-p-Cymene)(η4-1,3-cyclohexadiene)

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TBTDETa

(t-butylimido)tris(diethylamido)Tantalum

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TBTEMTa

(t-butylimido)tris(ethylmethylamido)Tantalum

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TDMAT

Tetrakis(dimethylamido)titanium(IV)

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TiCl4

Titanium tetrachloride

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