Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN Etch hard mask film materials is strongly required for wafer patterning below 70nm device. 1-Hexene and Propylene are deposited by CVD(Chemical Vapor Deposition) equipment and it forms ACL(Amorphous Carbon Layer). These hard mask have high etch resistance from high carbon content, it helps to define micro pattern on wafer. PRODUCT 1-Hexene 1-Hexene 자세히보기 4MS Tetramethylsilane 자세히보기 Propylene Propylene 자세히보기 1-Hexene Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. 1-Hexene Chemical formula C6H12 formula weight (g/mol) 84.16 Boiling point (℃) 60~66 Vapor pressure (℃/torr) 21 / 155 Phase Colorless Liquid Water reactivity Stable 닫기 4MS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetramethylsilane Chemical formula C4H12Si formula weight (g/mol) 88.22 Boiling point (℃) 26~28 Vapor pressure (℃/torr) - Phase Colorless Liquid Water reactivity Stable 닫기 Propylene Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Propylene Chemical formula C3H6 formula weight (g/mol) 42.08 Boiling point (℃) -47 Vapor pressure (℃/torr) 37 / 15.4 Phase Colorless Gas Water reactivity Stable 닫기