Gap Fill Material

Semiconductor device requires dielectric materials for isolation on STI(Shallow Trench Isolation), IMD(Inter-Metal Dielectric), and PMD(Pre-Metal Dielectric). For this process CVD(Chemical Vapor Deposition) and HDP(High Density Plasma) was usually used, but it started forming void inside STI as memory density is getting high. To make uniform and void-free gap-filling, SOD(Spin on Dielectric) is used for devices below 45nm.

CVD PROCESS-SOD PROCESS

PRODUCT

D2S2

Bis(ethylmethylamino)silane

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PS

Polysilazane

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TIPAS

Tris(isopropylmino)silane

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Tri-DMAS

Tris(dimethylamino)Silane

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