Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN High-k dielectric material is required for obtaining sufficient cell capacitance because of high density and scaling down in DRAM. ZrO2 and HfO2 are mainly used for DRAM device below 30nm. * High dielectric constant k value makes DRAM lose capacitance less. PRODUCT A2HP7 Tris(dimethylamido)Zirconium cyclopentadienide 자세히보기 Cp(Me)CpZr(OEt)2 (cyclopentadienyl)(methylcyclopentadienyl) Zirconium Bis(ethoxide) 자세히보기 TBTDEN Tris(diethylamido)(tert-butylimido)niobium(V) 자세히보기 TEMAHf Tetrakis(ethylmethylamido)Hafnium 자세히보기 TEMAZr Tetrakis(ethylmethylamido)Zirconium 자세히보기 TMA Trimethylaluminium 자세히보기 A2HP7 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tris(dimethylamido)Zirconium cyclopentadienide Chemical formula C11H23N3Zr formula weight (g/mol) 288.5 Boiling point (℃) 264 Vapor pressure (℃/torr) 90 / 0.3 Phase Pale yellow liquid Water reactivity Slowly react 닫기 Cp(Me)CpZr(OEt)2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. (cyclopentadienyl)(methylcyclopentadienyl) Zirconium Bis(ethoxide) Chemical formula C15H22O2Zr formula weight (g/mol) 325.56 Boiling point (℃) 87 / 0.32 Vapor pressure (℃/torr) 106 / 1.0 Phase Yellow liquid Water reactivity Slowly react 닫기 TBTDEN Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tris(diethylamido)(tert-butylimido)niobium(V) Chemical formula C16H39N4Nb formula weight (g/mol) 394.45 Boiling point (℃) 108 / 1.5 Vapor pressure (℃/torr) 94 / 0.1 Phase Yellow liquid Water reactivity Yellow liquid 닫기 TEMAHf Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetrakis(ethylmethylamido)Hafnium Chemical formula C12H32N4Hf formula weight (g/mol) 411.89 Boiling point (℃) 79 / 0.1 Vapor pressure (℃/torr) 90 / 1.0 Phase Pale yellow liquid Water reactivity Violently react 닫기 TEMAZr Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetrakis(ethylmethylamido)Zirconium Chemical formula C12H32N4Zr formula weight (g/mol) 323.62 Boiling point (℃) 81 / 0.1 Vapor pressure (℃/torr) 100 / 1.79 Phase Pale yellow liquid Water reactivity Violently react 닫기 TMA Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Trimethylaluminium Chemical formula C3H9Al formula weight (g/mol) 144.18 Boiling point (℃) 125 Vapor pressure (℃/torr) 60 / 69.3 Phase Colorless liquid Water reactivity Violently react 닫기
