Products

High-k for Metal Gate

Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN

High-k dielectric materials is required for gate insulator of semiconductor device below 45nm because of increasing tunneling leakage current rapidly in thin insulator by scaling. HfO2 has been used for gate insulator by chipmakers such as Intel, they are studying Al, Zr, STO, BST, etc. as alternative of Hf source.

PRODUCT

(HMDS)Hf(Py)3

(Hexamethyldisilazane)Tris(pyrrolidine)Hafnium

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A2HP7

Tris(dimethylamido)Zirconium cyclopentadienide

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HTTB

Hafnium(IV) tert-butoxide

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TBTDETa

(t-butylimido)tris(diethylamido)Tantalum

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TEMAHf

Tetrakis(ethylmethylamido)Hafnium

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TEMAZr

Tetrakis(ethylmethylamido)Zirconium

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