Products

Metallization Metal

Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN

Metal deposition process has been changed from PVD(Physical Vapor Deposition) to CVD(Chemical Vapor Deposition)/ALD(Atomic Layer Deposition) because of scaling down on semiconductor device. It makes metal precursors be changed either. Alpis-3 and MABOC are CVD/ALD metal precursors developed by DNF following roadmap.
※ Metallization Metal Materials change : W(Resistivity 8.0 μΩ-cm) → Al(2.7 μΩ-cm) → Cu(1.7 μΩ-cm)
※ Metal Deposition process change : PVD → CVD → ALD

PRODUCT

(Cp)Co(CO)2

(cyclopentadienyl)(dicarbonyl)cobalt

자세히보기
Alpis-3

Aluminum borohydride trimethylamine

자세히보기
BTBBDMT (= TBDMW)

Bis(t-butylimido)bis(dimethylamido)Tungsten

자세히보기
CCTBA

(Hexacarbonyl)(t-butylacetylene)dicobalt

자세히보기
DMAH

Dimethylalane

자세히보기
DMEAA

Dimethylethylamine:alane

자세히보기
MABONi [= Ni(dmamb)2]

(1-dimethylamino-2-methyl-2-butoxide)Nickel(II)

자세히보기
Ni(EtCp)2

Bis(ethylcyclopentadienyl) Nickel

자세히보기
TMA

Trimethylaluminium

자세히보기