Barrier Metal DPT Material Electrode Material Etch Hard Mask film GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN Nand Flash memory의 제조 방법이 20nm 이하부터 Floating Gate에서 Charge Trap으로 변경되고 있으며, 1x 이하 Nand Flash memory 제조를 위해서는 CT-3D 구조 도입이 요구되고 있습니다. 이 3차원 적층 구조는 Hole의 Aspect Ratio가 매우 크기때문에 ALD 장비를 활용한 정밀한 두께 컨트롤이 필요합니다. 이에 고품질 Blocking Oxide 또는 Tunneling Oxide(Gate Oxide) 재료로 ALD용 SiO2 및 SiN이 사용되어야 합니다. PRODUCT BTBAS Bis(tert-butylamino)silane 자세히보기 CSN-2 1,3-Diisopropyl-2,4-dimethylcylcodisilazane 자세히보기 DIPAS Diisopropylaminosilane 자세히보기 DTDH-3H2 Bis(dimethylsilyl)silylamine 자세히보기 DTDN-1H2 Bis(dimethylsilyl)(dimethylaminodimethylsilyl)amine 자세히보기 DTDN-1H5 Bis(methylsilyl)(dimethylaminomethylsilyl)amine 자세히보기 DTDN-2H2 Bis(dimethylaminomethylsilyl)trimethylsilylamine 자세히보기 DTDN-2H4 Bis(dimethylaminomethylsilyl)methylsilylamine 자세히보기 DTDN-3H3 Tris(dimethylaminomethylsilyl)amine 자세히보기 HCDS Hexachlorodisilane 자세히보기 NSi-01 Bis(dimethylaminomethylsilyl)amine 자세히보기 Tri-DMAS Tris(dimethylamino)Silane 자세히보기 BTBAS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(tert-butylamino)silane Chemical formula C8H22N2Si formula weight (g/mol) 174.36 Boiling point (℃) 167 Vapor pressure (℃/torr) 16 / 1.02 Phase Colorless Liquid Water reactivity Violently React 닫기 CSN-2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. 1,3-Diisopropyl-2,4-dimethylcylcodisilazane Chemical formula C8H22N2Si2 formula weight (g/mol) 202.44 Boiling point (℃) 173-175 Vapor pressure (℃/torr) 18 / 1.02 Phase Colorless Liquid Water reactivity Violently React 닫기 DIPAS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Diisopropylaminosilane Chemical formula C6H17NSi formula weight (g/mol) 131.3 Boiling point (℃) 115 Vapor pressure (℃/torr) 55 / 106 Phase Colorless Liquid Water reactivity Violently react 닫기 DTDH-3H2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(dimethylsilyl)silylamine Chemical formula C4H17NSi3 formula weight (g/mol) 163.44 Boiling point (℃) 125 Vapor pressure (℃/torr) 25 / 6.07 Phase Colorless Liquid Water reactivity Violently React 닫기 DTDN-1H2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(dimethylsilyl)(dimethylaminodimethylsilyl)amine Chemical formula C8H26N2Si3 formula weight (g/mol) 234.57 Boiling point (℃) 190 Vapor pressure (℃/torr) 41 / 1 Phase Colorless Liquid Water reactivity Violently react 닫기 DTDN-1H5 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(methylsilyl)(dimethylaminomethylsilyl)amine Chemical formula C5H20N2Si3 formula weight (g/mol) 192.49 Boiling point (℃) 166 Vapor pressure (℃/torr) 11 / 1 Phase Colorless Liquid Water reactivity Violently React 닫기 DTDN-2H2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(dimethylaminomethylsilyl)trimethylsilylamine Chemical formula C9H29N3Si3 formula weight (g/mol) 263.61 Boiling point (℃) 237 Vapor pressure (℃/torr) 59 / 1 Phase Colorless Liquid Water reactivity Slowly react 닫기 DTDN-2H4 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(dimethylaminomethylsilyl)methylsilylamine Chemical formula C7H25N3Si3 formula weight (g/mol) 235.14 Boiling point (℃) 208 Vapor pressure (℃/torr) 46 / 1 Phase Colorless Liquid Water reactivity Violently React 닫기 DTDN-3H3 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tris(dimethylaminomethylsilyl)amine Chemical formula C9H30N4Si3 formula weight (g/mol) 278.62 Boiling point (℃) 250 Vapor pressure (℃/torr) 73 / 1 Phase Colorless Liquid Water reactivity Violently React 닫기 HCDS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Hexachlorodisilane Chemical formula Si2Cl6 formula weight (g/mol) 268.89 Boiling point (℃) 147.5 Vapor pressure (℃/torr) 20 / 3.8 Phase Colorless Liquid Water reactivity Violently react 닫기 NSi-01 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(dimethylaminomethylsilyl)amine Chemical formula C6H21N3Si2 formula weight (g/mol) 191.42 Boiling point (℃) 168 Vapor pressure (℃/torr) 27 / 1 Phase Colorless Liquid Water reactivity Violently React 닫기 Tri-DMAS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tris(dimethylamino)Silane Chemical formula C6H19N3Si formula weight (g/mol) 161.3 Boiling point (℃) 145 Vapor pressure (℃/torr) 25 / 7 Phase Colorless Liquid Water reactivity Slowly react 닫기
