Products

SiO2 / SiN

Barrier Metal DPT Material Electrode Material Etch Hard Mask Filem GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN

Method of manufacturing flash memory is being changed from FG(Floating Gate) to CT(Charge Trap) for device scaling below 20nm. In 2013, CT-3D may be chosen by chipmakers to continue flash memory scaling below 1x nm node. For this process SiO2 and SiN, ALD precursors, as a tunneling oxide(gate oxide) or blocking oxide is required to study.

PRODUCT

BTBAS

Bis(tert-butylamino)silane

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CSN-2

1,3-Diisopropyl-2,4-dimethylcylcodisilazane

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DIPAS

Diisopropylaminosilane

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DTDH-3H2

Bis(dimethylsilyl)silylamine

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DTDN-1H2

Bis(dimethylsilyl)(dimethylaminodimethylsilyl)amine

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DTDN-1H5

Bis(methylsilyl)(dimethylaminomethylsilyl)amine

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DTDN-2H2

Bis(dimethylaminomethylsilyl)trimethylsilylamine

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DTDN-2H4

Bis(dimethylaminomethylsilyl)methylsilylamine

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DTDN-3H3

Tris(dimethylaminomethylsilyl)amine

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HCDS

Hexachlorodisilane

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NSi-01

Bis(dimethylaminomethylsilyl)amine

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Tri-DMAS

Tris(dimethylamino)Silane

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